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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5429 DESCRIPTION *Contunuous Collector Current-IC= 7A *Low Collector-Emitter Saturation Voltage: VCE(sat)= 1.2V(Max) @IC= 7A *Wide Area of Safe Operation APPLICATIONS *Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature VALUE 100 100 6 7 1 40 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 4.37 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current Gain-Bandwidth Product CONDITIONS IC= 50mA; IB= 0 IC= 2A; IB= 0.2A IC= 7A; IB= 0.7A IC= 2A; IB= 0.2A IC= 7A; IB= 0.7A VCB= 100V; IE= 0 VCE= 90V; VBE(off)= -1.5V VCE= 90V; VBE(off)= -1.5V,TC=150 VEB= 6V; IC= 0 IC= 0.5A ; VCE= 2V IC= 2A; VCE= 2V IC= 5A; VCE= 2V IC= 0.5A; VCE= 10V; f=10MHz 30 30 20 20 MIN 100 2N5429 MAX UNIT V 0.7 1.2 1.2 2.0 0.1 0.1 1.0 0.1 V V V V mA mA mA 120 MHz isc Websitewww.iscsemi.cn 2 |
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